Everyone loves a full-wave bridge rectifier, but there’s no denying that they aren’t 100% efficient due to the diode voltage ...
Abstract: This study experimentally investigated hot carrier degradation (HCD) in Si-MOSFETs at cryogenic temperatures. Stress was applied to the devices at 4 K and 300 K, followed by ...
Abstract: This brief reports a compact DC-110GHz single-pole single-throw (SPST) switch in 22nm FDSOI CMOS technology. The switch adopts solely three n-MOSFETs, two of them with a special device ...
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