Abstract: This article studies the short-circuit (SC) failure modes and mechanism of ohmic-gate GaN high electron mobility transistors (HEMTs) through experimental evaluation and numerical ...
Abstract: The operation and reliability of gate driver circuits based on 4H-SiC MOSFETs at temperatures up to 300°C were reported. Due to the advantages of 4H-SiC MOSFETs, the driver circuit can ...
The web application can be compiled and run locally using Eclipse, or in a cloud development container like Github Codespaces or gitpod.io. Both of these services provide a number of free usage hours ...
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